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fn7355 rev 1.00 page 1 of 12 august 3, 2005 fn7355 rev 1.00 august 3, 2005 el5611, el5811 60mhz rail-to-rail input-output vcom amplifiers datasheet the el5611 and el5811 are low power, high voltage rail-to- rail input-output amplifiers targeted primarily at v com applications in tft-lcd displa ys. the el5611 contains six amplifiers, and the el5811 contains eight amplifiers. operating on supplies ranging from 5v to 15v, while consuming only 2.5ma per a mplifier, the el5611 and el5811 have a bandwidth o f 60mhz (-3db). they also provide common mode input abili ty beyond the supply rails, as well as rail-to-rail output capability. this enables these amplifiers to offer maximum dynamic range at any supply voltage. the el5611 and el5811 also feature fast slewing and settling times, as well as a high output drive capability of 65ma (sink and source) . in addition to v com applications, these features make these amplifiers ideal for high speed filtering and signal conditi oning application. other applications include battery p ower, portable devices, and anywhere low power cons umption is important. the el5611 is available in 8 -pin msop and 8-pin hmsop packages. the el5811 is available in space-saving 28-pin htssop packages.these ampl ifiers operate over a temperature range of -40c to +85c. features ? 60mhz -3db bandwidth ? supply voltage = 4.5v to 16.5v ? low supply current (per amplifier) = 2.5ma ? high slew rate = 75v/s ? unity-gain stable ? beyond the rails input capability ? rail-to-rail output swing ? 180ma output short current ? pb-free plus anneal available (rohs compliant) applications ? tft-lcd panels ?v com amplifiers ? drivers for a-to-d converters ? data acquisition ? video processing ? audio processing ? active filters ? test equipment ? battery-powered applications ? portable equipment ordering information part number package tape & reel pkg. dwg. # el5611ire 24-pin htssop - mdp0048 el5611ire-t7 24-pin htssop 7 mdp0048 EL5611IRE-T13 24-pin htssop 13 mdp0048 el5811irez (see note) 28-pin htssop (pb-free) - mdp0048 el5811irez-t7 (see note) 28-pin htssop (pb-free) 7 mdp0048 el5811irez-t13 (see note) 28-pin htssop (pb-free) 13 mdp0048 el5811irez (see note) 28-pin htssop (pb-free) - mdp0048 el5811irez-t7 (see note) 28-pin htssop (pb-free) 7 mdp0048 el5811irez-t13 (see note) 28-pin htssop (pb-free) 13 mdp0048 note: intersil pb-free plus anneal products employ special pb-fr ee material sets; molding compounds/die attach materials and 100% matte tin plate termination fini sh, which are rohs compliant an d compatible with both snpb and pb-free soldering operations. int ersil pb-free products are msl classified at pb-free peak reflow temperatures that meet or exceed the pb-free requirements of ipc/jedec j std-020. ordering information (continued) part number package tape & reel pkg. dwg. #
el5611, el5811 fn7355 rev 1.00 page 2 of 12 august 3, 2005 pinouts el5611 (24-pin htssop) top view el5811 (28-pin htssop) top view vdd voutf vinf- vinf+ voute vouta vina- vina+ vss voutb vine- vine+ vss voutd+ vinb- vinb+ vdd vinc+ vinc- voutd nc voutc nc voutd- 1 2 3 4 16 15 14 13 5 6 7 12 11 9 8 10 20 19 18 17 24 23 22 21 vinh+ vinh- vouth voutg ving- vdd vina+ vina- vouta voutb ving+ vss vss vinf+ vinb- vinb+ vinc+ vinc- voutc voutf voute vine- vine+ voutd vind- vind+ vdd vinf- 1 2 3 4 28 27 26 25 5 6 7 24 23 22 8 21 9 10 20 19 11 12 13 18 17 16 14 15
el5611, el5811 fn7355 rev 1.00 page 3 of 12 august 3, 2005 absolute maximum ratings (t a = 25c) supply voltage between v s + and v s - . . . . . . . . . . . . . . . . . . . .+18v input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . v s - - 0.5v, v s +0.5v maximum continuous output current . . . . . . . . . . . . . . . . . . . 65ma maximum die temperature . . . . . . . . . . . . . . . . . . . . . . . . . . +125c storage temperature . . . . . . . . . . . . . . . . . . . . . . . .-65c to +150c ambient operating temperature . . . . . . . . . . . . . . . .-4 0c to +85c power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see curves caution: stresses above those listed in ?absolute maximum ratings? may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. important note: all parameters having min/max specifications are guaranteed. typical values are for information purposes only. u nless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: t j = t c = t a electrical specifications v s + = +5v, v s - = -5v, r l = 1k ? to 0v, t a = 25c, unless otherwise specified parameter description conditions min typ max unit input characteristics v os input offset voltage v cm = 0v 3 15 mv tcv os average offset voltage drift (note 1) 7 v/c i b input bias current v cm = 0v 2 60 na r in input impedance 1g ? c in input capacitance 2pf cmir common-mode input range -5.5 +5.5 v cmrr common-mode rejection ratio for v in from -5.5v to 5.5v 50 70 db a vol open-loop gain -4.5v ?? v out ?? 4.5v 62 70 db output characteristics v ol output swing low i l = -5ma -4.92 -4.85 v v oh output swing high i l = 5ma 4.85 4.92 v i sc short-circuit current 180 ma i out output current 65 ma power supply performance psrr power supply rejection ratio v s is moved from 2.25v to 7.75v 60 80 db i s supply current (per amplifier) no load 2.5 3.75 ma dynamic performance sr slew rate (note 2) -4.0v ?? v out ?? 4.0v, 20% to 80% 75 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 80 ns bw -3db bandwidth 60 mhz gbwp gain-bandwidth product 32 mhz pm phase margin 50 cs channel separation f = 5mhz 110 db d g differential gain (note 3) r f = r g = 1k ?? and v out = 1.4v 0.17 % d p differential phase (note 3) r f = r g = 1k ?? and v out = 1.4v 0.24 notes: 1. measured over operating temperature range. 2. slew rate is measured on rising and falling edges. 3. ntsc signal generator used.
el5611, el5811 fn7355 rev 1.00 page 4 of 12 august 3, 2005 electrical specifications v s + = +5v, v s - = 0v, r l = 1k ? to 2.5v, t a = 25c, unless otherwise specified parameter description condition min typ max unit input characteristics v os input offset voltage v cm = 2.5v 3 15 mv tcv os average offset voltage drift (note 4) 7 v/c i b input bias current v cm = 2.5v 2 60 na r in input impedance 1g ? c in input capacitance 2pf cmir common-mode input range -0.5 +5.5 v cmrr common-mode rejection ratio for v in from -0.5v to 5.5v 45 66 db a vol open-loop gain 0.5v ?? v out ?? 4.5v 62 70 db output characteristics v ol output swing low i l = -5ma 80 150 mv v oh output swing high i l = 5ma 4.85 4.92 v i sc short-circuit current 180 ma i out output current 65 ma power supply performance psrr power supply rejection ratio v s is moved from 4.5v to 15.5v 60 80 db i s supply current (per amplifier) no load 2.5 3.75 ma dynamic performance sr slew rate (note 5) 1v ?? v out ?? 4v, 20% to 80% 75 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 80 ns bw -3db bandwidth 60 mhz gbwp gain-bandwidth product 32 mhz pm phase margin 50 cs channel separation f = 5mhz 110 db d g differential gain (note 6) r f = r g = 1k ? and v out = 1.4v 0.17 % d p differential phase (note 6) r f = r g = 1k ? and v out = 1.4v 0.24 notes: 4. measured over operating temperature range. 5. slew rate is measured on rising and falling edges. 6. ntsc signal generator used.
el5611, el5811 fn7355 rev 1.00 page 5 of 12 august 3, 2005 electrical specifications v s + = +15v, v s - = 0v, r l = 1k ? to 7.5v, t a = 25c, unless otherwise specified parameter description condition min typ max unit input characteristics v os input offset voltage v cm = 7.5v 3 15 mv tcv os average offset voltage drift (note 7) 7 v/c i b input bias current v cm = 7.5v 2 60 na r in input impedance 1g ? c in input capacitance 2pf cmir common-mode input range -0.5 +15.5 v cmrr common-mode rejection ratio for v in from -0.5v to 15.5v 53 72 db a vol open-loop gain 0.5v ?? v out ?? 14.5v 62 70 db output characteristics v ol output swing low i l = -5ma 80 150 mv v oh output swing high i l = 5ma 14.85 14.92 v i sc short-circuit current 180 ma i out output current 65 ma power supply performance psrr power supply rejection ratio v s is moved from 4.5v to 15.5v 60 80 db i s supply current (per amplifier) no load 2.5 3.75 ma dynamic performance sr slew rate (note 8) 1v ?? v out ?? 14v, 20% to 80% 75 v/s t s settling to +0.1% (a v = +1) (a v = +1), v o = 2v step 80 ns bw -3db bandwidth 60 mhz gbwp gain-bandwidth product 32 mhz pm phase margin 50 cs channel separation f = 5mhz 110 db d g differential gain (note 9) r f = r g = 1k ? and v out = 1.4v 0.16 % d p differential phase (note 9) r f = r g = 1k ? and v out = 1.4v 0.22 notes: 7. measured over operating temperature range 8. slew rate is measured on rising and falling edges 9. ntsc signal generator used
el5611, el5811 fn7355 rev 1.00 page 6 of 12 august 3, 2005 typical performance curves figure 1. input offset voltage distribution figure 2. input offset voltage drift figure 3. input offset voltage vs temperature figure 4. input bias current vs temperature figure 5. output high voltage vs temperature figure 6. output low voltage vs temperature 200 quantity (amplifiers) input offset voltage (mv) 0 -12 500 400 100 300 -10 -8 -6 -4 -2 -0 2 4 6 8 10 12 typical production distribution v s =5v t a =25c input offset voltage drift, tcv os (v/c) 1 3 5 7 9 11 13 15 17 19 21 5 quantity (amplifiers) 0 25 15 20 10 v s =5v typical production distribution 0 0.5 input offset voltage (mv) temperature (c) -0.5 1 -10 -50 30 70 110 150 1.5 2 0 input bias current (a) temperature (c) -0.008 0.008 -0.004 -0.012 0.004 -50 -10 30 70 110 150 v s =5v 4.88 4.90 output high voltage (v) 4.86 4.96 4.92 4.94 v s =5v i out =5ma temperature (c) -10 -50 30 70 110 150 -4.91 -4.87 output low voltage (v) -4.95 -4.85 -4.89 -4.93 v s =5v i out =5ma temperature (c) -10 -50 30 70 110 150
el5611, el5811 fn7355 rev 1.00 page 7 of 12 august 3, 2005 figure 7. open-loop gain vs temperature figure 8. slew rate vs tem perature figure 9. supply current per amplifier vs supply voltage figure 10. supply current per amplifier vs temperature figure 11. differential gain figure 12. differential phase typical performance curves (continued) 70 open-loop gain (db) 75 60 65 v s =5v r l =1k ? temperature (c) -10 -50 30 70 110 150 75 76 slew rate (v/s) 74 78 73 72 77 v s =5v temperature (c) -10 -50 30 70 110 150 1.7 2.5 supply current (ma) supply voltage (v) 1.5 2.9 2.1 2.3 2.7 1.9 t a =25c 8 4 121620 2.45 2.5 supply current (ma) 2.4 2.6 2.65 2.55 2.7 v s =5v temperature (c) -10 -50 30 70 110 150 -0.16 -0.04 differential gain (%) ire -0.18 0 -0.12 -0.06 -0.02 -0.14 0 100 200 -0.08 -0.1 v s =5v a v =2 r l =1k ? ?????
el5611, el5811 fn7355 rev 1.00 page 8 of 12 august 3, 2005 figure 13. harmonic distortion vs v op-p figure 14. open loop gain and phase figure 15. frequency response for various r l figure 16. frequency response for various c l figure 17. closed loop output impedance figure 18. maximum output swing vs frequency typical performance curves (continued) -80 -40 distortion (db) v op-p (v) -90 -30 -60 -50 -70 2 04610 8 v s =5v a v =2 r l =1k ? freq=1mhz 3rd hd 2nd hd gain (db) 60 1k frequency (hz) phase () 40 20 250 190 130 70 10 -50 10k 100k 1m 10m 100m 80 0 -20 gain phase magnitude (normalized) (db) 5 3 frequency (hz) 1 -1 -3 -5 100k 1m 100m 1k ? 10m 150 ? v s =5v a v =1 c load =0pf 560 ? ?????? ???? ? ? ? ??? ? ) 400 350 frequency (hz) 300 250 200 0 10k 100k 100m 1m 10m 150 100 50 2 10 maximum output swing (v p-p ) frequency (khz) 0 12 6 8 4 100k 10k 1m 100m 10m v s =5v a v =1 r l =1k ? distortion <1%
el5611, el5811 fn7355 rev 1.00 page 9 of 12 august 3, 2005 figure 19. cmrr figure 20. psrr figure 21. input voltage noise spectral density figure 22. channel separation figure 23. small-signal overshoot vs load capacitance figure 24. settling time vs step size typical performance curves (continued) cmrr (db) -15 frequency (hz) -45 -65 1k 10k 100m 1m 10m -55 100k -25 -35 0 psrr (db) -80 -60 -40 -20 psrr+ frequency (hz) 100 1k 10m 100k 1m 10k psrr- v s =5v t a =25c 10 100 voltage noise (nv/ ? hz) frequency (hz) 1 1k 100 1k 100m 1m 10m 100k 10k -60 xtalk (db) -160 -120 -100 -80 dual measured ch a to b quad measured ch a to d or b to c other combinations yield improved rejection v s =5v r l =1k ? a v =1 v in =110mv rms -140 frequency (hz) 1k 10k 10m 30m 1m 100k load capacitance (pf) overshoot (%) v s =5v a v =1 r l =1k ? v in =50mv t a =25c 10 1k 100 100 0 40 60 80 20 -4 4 step size (v) settling time (ns) -5 5 0 2 -2 65 55 75 105 95 v s =5v a v =1 r l =1k ? 85 3 -1 1 -3 0.1% 0.1%
el5611, el5811 fn7355 rev 1.00 page 10 of 12 august 3, 2005 figure 25. large signal transient response figure 26. small signal transient response typical performance curves (continued) 50ns/div 1v step v s =5v t a =25c a v =1 r l =1k ? ?? ? ? pin descriptions el5611 el5811 name function equivalent circuit 1, 5, 9, 14, 20, 23 4, 5, 10, 11, 17, 18, 25, 26 voutx amplifiers output 2, 3, 6, 7, 9, 10, 15, 16, 21, 22 2, 3, 6, 7, 8, 9, 12. 13, 15, 16, 19, 20, 23, 24, 27, 28 vinx amplifiers input 8, 24 1, 14 vs+ positive power supply 24, 17 21, 22 vs- negative power supply 12, 13 nc not connected v s+ gnd v s- circuit 1 v s+ v s- circuit 2
el5611, el5811 fn7355 rev 1.00 page 11 of 12 august 3, 2005 applications information product description the el5611 and el5811 volt age feedback amplifiers are fabricated using a high voltage cmos process. they exhibit rail-to-rail input and output cap ability, are unity gain stable and have low power consumption (2.5ma per amplifier). these features make the el561 1, and el5811 ideal for a wide range of general-purpose applications. connected in voltage follower mode and driving a load of 1k ? , the el5611 and el5811 have a -3db bandwidth of 60mhz while maintaining a 75v/s slew rate. the el5611 a six channel amplifier, and the el5811 an 8 channel amplifier. operating voltage, input, and output the el5611and el5811 are specif ied with a single nominal supply voltage from 5v to 15v o r a split supply with its total range from 5v to 15v. correct operation is gua ranteed for a supply range of 4.5v to 16. 5v. most el5611 and el5811 specifications are stable over both the full s upply range and operating temperatures of -40c to +85c. parameter variations with operating vo ltage and/or temperature are shown in the typical performance curves. the input common-mode volta ge range of the el5611 and el5811 extends 500mv beyond the supply rails. the output swings of the el5611 and el5811 ty pically extend to within 100mv of positive an d negative supply rails with load currents of 5ma. decreasing load currents will extend the output voltage range even closer to the supply rails. figure 27 shows the input a nd output waveforms for the device in the unity-gain configuration. o peration is from 5v supply with a 1k ? load connected to gnd . the input is a 10v p-p sinusoid. the output volt age is approximately 9.8v p-p . short circuit current limit the el5611 and el5811 will limi t the short circuit current to 180ma if the output is directly shorted to the positive or the negative supply. if an output is shorted indefinitely, the powe r dissipation could easily increa se such that the device may be damaged. maximum reliability i s maintained if the output continuous current never exceeds 65ma. this limit is set by the design of the internal metal interconnects. output phase reversal the el5611 and el5811 are immu ne to phase reversal as long as the input volt age is limited from v s - -0.5v to v s + +0.5v. figure 28 shows a photo of the output of the device with the input voltage driv en beyond the supply rails. although the device' s output will not change phase, the input's overvoltage should be avoided. if an input voltage exceeds supply voltage by mor e than 0.6v, electrostatic protection diodes placed in the input stage of the device begin to conduct and overvoltage damage could occur. power dissipation with the high-output drive c apability of the el5611 and el5811 amplifiers, it is po ssible to exce ed the 125c 'absolute-maximum junction temperature' under certain load current conditions. therefore, i t is important to calculate the maximum junction t emperature for the application to determine if load conditions n eed to be modified for the amplifier to remain in t he safe operating area. the maximum power dissipation allowed in a package is determined according to: where: ?t jmax = maximum junction temperature ?t amax = maximum ambient temperature ? ? ja = thermal resistance of the package ?p dmax = maximum power dissipation in the package the maximum power dissipation actually produced by an ic is the total quiescent supply current times the total power supply voltage, plus the power i n the ic due to the loads, or: output input 5v 5v 10s v s = 5v, t a = 25c, a v = 1, v in = 10v p-p figure 27. operation with rail-to-rail input and output 1v 1v 10s v s = 2.5v, t a = 25c, a v = 1, v in = 6v p-p figure 28. operation with beyond-the-rails input p dmax t jmax t amax C ? ja -------------------------------------------- - = ? iv ? s i smax v ? s +v out i ? i load i ? C + ?? =
fn7355 rev 1.00 page 12 of 12 august 3, 2005 el5611, el5811 intersil products are manufactured, assembled and tested utilizing iso9001 quality systems as noted in the quality certifications found at www.intersil.com/en/suppor t/qualandreliability.html intersil products are sold by description on ly. intersil may modify the circuit design an d/or specifications of products at any time without notice, provided that such modification does not, in intersil's sole judgment, affect the form, fit or function of the product. accordingly, the reader is cautioned to verify that datasheets are current before placing orders. information fu rnished by intersil is believed to be accu rate and reliable. however, no responsib ility is assumed by intersil or its subsidiaries for its use; nor for any infrin gements of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see www.intersil.com for additional products, see www.intersil.com/en/products.html ? copyright intersil americas ll c 2004-2005. all rights reserved. all trademarks and registered trademarks are the property of their respective owners. when sourcing, and: when sinking, where: ? i = 1 to 6 for el5611 and 1 to 8 for el5811 ?v s = total supply voltage ?i smax = maximum supply cur rent per amplifier ?v out i = maximum output voltage of the application ?i load i = load current if we set the two p dmax equations equal to each other, we can solve for r load i to avoid device overheat. figures 29 and 30 provide a convenient wa y to see if the device will overheat. the maximum safe power dissipation can be found graphically, based on the package type and the ambient temperature. by using t he previous equation, it is a simple matter to see if p dmax exceeds the device's power derating curves. to ensure prope r operation, it is important to observe the recommended derating curves shown in figures 29 & 30. unused amplifiers it is recommended that any u nused amplifiers in a dual and a quad package be conf igured as a unity gain follower. the inverting input should be dire ctly connected to the output and the non-inverting inpu t tied to the ground plane. power supply bypassing and printed circuit board layout the el5611 and el5811 can provide gain at high frequency. as with any high-frequency device, good printed circuit board layout is necessary for optimum performance. ground plane construction is highl y recommended, lead lengths should be as short as possibl e and the power supply pins must be well bypassed to reduce the risk of oscillation. for normal single supply operation, where the v s - pin is connected to ground , a 0.1f ceramic c apacitor should be placed from v s + to pin to v s - pin. a 4.7f tantalum capacitor should then be connected in parallel, placed in the region of the amplifier. one 4.7f capacitor may be used for multiple devices. this same capacitor combination should be placed at each supply pin to gr ound if split supplies are to be used. p dmax ? iv ? s i smax v ? out iv s - ? i load i ? C + ?? = figure 29. package power dissipation vs ambient temperature jedec jesd51-7 high effective thermal conductivity test board - htssop exposed diepad soldered to pcb per jesd51-5 3.5 3 2.5 1.5 1 0.5 0 0 255075100 150 ambient temperature (c) power dissipation (w) 3.030w ? ja =33c/w htssop24 ? ja =30c/w htssop28 125 85 2 3.333w figure 30. package power dissipation vs ambient temperature jedec jesd51-3 low effective thermal conductivity test board 1 0.9 0.6 0.4 0.3 0.2 0.1 0 0 255075100 150 ambient temperature (c) power dissipation (w) 85 0.8 0.5 0.7 125 833mw ? ja =120c/w htssop24 ? ja =110c/w htssop28 909mw

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